The company samsung electronics reported about the beginning of mass production for the first gigabit chips memory DDR2 DRAM with the use of 60- nm technological process.
On the assertion of producer, occurs serious advance , since production efficiency is increased by 40% in comparison with 80- nm process, used for the production of gigabit chips DRAM, beginning from the middle of 2006, and doubly - in comparison with 90 nm process.
The growth of DRAM chips production with volume 1 Gb will be coordinated with the growing requirement for large memory volume module , caused by the release of OS vista, which as is known required more operational memory, than its predecessors.
The guarantee the success in the mastery of this thin standards technical process samsung calls the wide use of three-dimensional transistors, witch allow to increase the density of the elements arrangement on the layer base . In particular, samsung specialists in the new memory start the use of the key technology, RCAT (recess channel array transistor), which allow to decrease the size of DRAM memory cell . This technology was for the first time presented in 2003 and was adapted in samsung operational memory , beginning from chips, produced according to the standards 90 nm. .
The first models of 60- nm memory DDR2 DRAM with 1 Gbit, were shown by Samsung in 2005. In the opinion of analysts, such chips will become the basic production form on the market DRAM in 2008.