- NVIDIA GT300 rumors - AMD RV740 40nm - New Static random access memory - OCZ flex EX memory -

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POSTER: computer news   ||   NVIDIA GT300 RUMORS	DATE:2008-12-17
According to some rumor , the production of the following generation graphic chips NVIDIA, known under the code name GT300, will take place already in the first quarter of the following year. Let us recall, that the development cycle of these solutions must be completed only in the fourth quarter 2009 . It is expected that GT300 will be doubly more complex chip in comparison with GT200, the quantity of stream processors will be brought from present 240 to 480. In this case, the technical process will remain in the same, 55- nm. If information is confirmed, then GT300 will become the new high end NVIDIA product , developed within a short time. Select Rating Very Bad Bad Good Very Good   Very Bad Bad Good Very Good 0 0 1 3 NVIDIA GT300 rumors	Add Comment ( 1 ) NVIDIA GT300 RUMORS

POSTER: computer news   ||   AMD RV740 40NM	DATE:2008-12-17
Today associate reported that AMD company has already the first models 40 NM video chip RV740, which is called over the intermediate-term to replace RV730, which serves as base for Radeon HD 4670 and Radeon HD 4650. Specifically, RV740 can become for AMD the first chip to the mastery of 40 NM technical process . Let us again note that the announcement of RV740 will hardly take place earlier than spring in next year. RV770 successor on base of 40 NM core will appear later. Select Rating Very Bad Bad Good Very Good   Very Bad Bad Good Very Good 0 0 0 2 AMD RV740 40nm	Add Comment ( 1 ) AMD RV740 40NM

POSTER: computer news   ||   NEW STATIC RANDOM ACCESS MEMORY	DATE:2008-12-17
The corporations Toshiba, IBM and AMD declared about the development of cell static storage with arbitrary access (Static random access memory, SRAM), whose area was equal to 0,128 sq. m. This is the smallest in the world functioning cell SRAM. According to the size it up to 50% less than similar cell. In the development of this SRAM are used finFET transistors  , prepared with the application of  HKMG technology (high- k/metal gate : materials with high constant dielectric and metallic locks). Cells SRAM are the key components of the majority of large-scale integrated circuits, for example, microprocessors. The decrease of SRAM cells sizes will help to decrease the sizes and the energy consumption of processors, having simultaneously increased their speed. The simulation of cell with 0,063 sq. m area, corresponds to the application of standards less than 22 NM. Select Rating Very Bad Bad Good Very Good   Very Bad Bad Good Very Good 0 0 0 2 New Static random access memory	Add Comment ( 1 ) NEW STATIC RANDOM ACCESS MEMORY

POSTER: computer news   ||   OCZ FLEX EX MEMORY	DATE:2008-12-17
The Hybrid cooling system (memory modules) flex II  developed by OCZ technology company  provided both liquid cooling with the aid of built-in water-blocks and air cooling with the aid of passive radiator. Yesterday OCZ technology company presented a new memory collections with 2 X 2 GB volume , in this case the hybrid cooling system flex EX will be used. . OCZ proposed four memory collections with 2 X 2 GB volume: OCZ PC 2-9600 Flex EX 4 GB (2 x 2 GB), 1200 MHz DDR (6-6- 6-18), 2.2 v; OCZ PC 2-6400 Flex EX 4 GB (2 x 2 GB), 800 MHz DDR (4- 4- 3-15), 2.1 v; OCZ PC 3-12800 Flex EX 4 GB (2 x 2 GB), 1600 MHz DDR (7-6- 6-24), 1.9 v; OCZ PC 3-16600 Flex EX 4 GB (2 x 2 GB), 2000 MHz DDR (8-8-8-30), 2.0 v. All OCZ memory modules with  flex EX technology are supplied with life time guarantee. Select Rating Very Bad Bad Good Very Good   OCZ flex EX memory	Add Comment ( 1 ) OCZ FLEX EX MEMORY

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